transient voltage suppressors for esd protection general description sod-923 lesd9b5.0st5g leshan radio company, ltd. 1/4 we declare that the material of product compliance with rohs requirements. shipping 8000/tape&reel lesd9b5.0st5g ordering information device marking m the esd9b series is designed to protect voltage sensitive components from esd. excellent clamping capability, low leakage, and fast response time provide best in class protection on designs that are exposed to esd. because of its small size, it is suited for use in cellular phones, mp3 players, digital cameras and many other portable applications where board space comes at a premium. specification features ? low capacitance 15 pf ? low clamping voltage ? small body outline dimensions: 0.039 x 0.024 (1.0mm x 0.60mm) ? low body height: 0.016 (0.4 mm) ? stand ? off voltage: 3.3 v, 5 v ? low leakage ? response time is < 1 ns ? iec61000 ? 4 ? 2 level 4 esd protection ? aec ? q101 qualified and ppap capable ? sz prefix for automotive and other applications requiring unique site and control change requirements ? this is a pb ? free device mechanical characteristics case: void-free, transfer-molded, thermosetting plastic epoxy meets ul 94 v ? 0 lead finish: 100% matte sn (tin) mounting position: any qualified max reflow temperature: 260 c device meets msl 1 requirements maximum ratings rating symbol value unit iec 61000 ? 4 ? 2 (esd) contact air 18 18 kv iec 61000 ? 4 ? 4 (eft) 40 a total power dissipation on fr ? 5 board (note 1) @ t a = 25 c thermal resistance, junction ? to ? ambient p d r ja 300 400 mw c/w junction and storage temperature range t j , t stg ? 55 to +150 c lead solder temperature ? maximum (10 second duration) t l 260 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. fr ? 5 = 1.0 x 0.75 x 0.62 in.
leshan radio company, ltd. lesd9b5.0st5g 2/4 bi ? directional tvs i pp i pp v i i r i t i t i r v rwm v c v br v rwm v c v br electrical characteristics (t a = 25 c unless otherwise noted) symbol parameter i pp maximum reverse peak pulse current v c clamping voltage @ i pp v rwm working peak reverse voltage i r maximum reverse leakage current @ v rwm v br breakdown voltage @ i t i t test current c capacitance @ v r = 0 v and f = 1.0 mhz electrical characteristics (t a = 25 c unless otherwise noted) device device marking v rwm (v) i r ( a) @ v rwm v br (v) @ i t (note 2) i t c (pf) v c v c (v) @ i pp = 1 a max max min max ma typ per iec61000 ? 4 ? 2 (note 3) max per 8 x 20 s (note 4) lesd9b5.0st5g m 5.0 1.0 5.8 7.8 1.0 15 figures 1 and 2 see below 12.5 2. v br is measured with a pulse test current i t at an ambient temperature of 25 c. 3. for test procedure see figures 3 and 4 and application note and8307/d. 4. surge current waveforms per figure 5. figure 1. esd clamping voltage screenshot positive 8 kv contact per iec61000 ? 4 ? 2 figure 2. esd clamping voltage screenshot negative 8 kv contact per iec61000 ? 4 ? 2
leshan radio company, ltd. lesd9b5.0st5g 3/4 iec 61000 ? 4 ? 2 spec. level test voltage (kv) first peak current (a) current at 30 ns (a) current at 60 ns (a) 1 2 7.5 4 2 2 4 15 8 4 3 6 22.5 12 6 4 8 30 16 8 i peak 90% 10% iec61000 ? 4 ? 2 waveform 100% i @ 30 ns i @ 60 ns t p = 0.7 ns to 1 ns figure 3. iec61000 ? 4 ? 2 spec figure 4. diagram of esd test setup 50 50 cable tvs oscilloscope esd gun the following is taken from application note and8308/d ? interpretation of datasheet parameters for esd devices. esd voltage clamping for sensitive circuit elements it is important to limit the voltage that an ic will be exposed to during an esd event to as low a voltage as possible. the esd clamping voltage is the voltage drop across the esd protection diode during an esd event per the iec61000 ? 4 ? 2 waveform. since the iec61000 ? 4 ? 2 was written as a pass/fail spec for larger systems such as cell phones or laptop computers it is not clearly defined in the spec how to specify a clamping voltage at the device level. on semiconductor has developed a way to examine the entire voltage waveform across the esd protection diode over the time domain of an esd pulse in the form of an oscilloscope screenshot, which can be found on the datasheets for all esd protection diodes. for more information on how on semiconductor creates these screenshots and how to interpret them please refer to and8307/d. figure 5. 8 x 20 s pulse waveform 100 90 80 70 60 50 40 30 20 10 0 020406080 t, time ( s) % of peak pulse current t p t r pulse width (t p ) is defined as that point where the peak current decay = 8 s peak value i rsm @ 8 s half value i rsm /2 @ 20 s
leshan radio company, ltd. lesd9b5.0st5g 4/4 sod?923 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeters. 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. dim min nom max millimeters a 0.34 0.37 0.40 b 0.15 0.20 0.25 c 0.07 0.12 0.17 d 0.75 0.80 0.85 e 0.55 0.60 0.65 0.95 1.00 1.05 l 0.05 0.10 0.15 h e 0.013 0.015 0.016 0.006 0.008 0.010 0.003 0.005 0.007 0.030 0.031 0.033 0.022 0.024 0.026 0.037 0.039 0.041 0.002 0.004 0.006 min nom max inches d e b c a l 2x ?y? ?x? 0.08 (0.0032) xy h e 0.40 0.30 0.90 dimensions: millimeters soldering footprint* 2 1
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